"Vapor phase epitaxy of Hg_1-xCd_xI₂ on sapphire",
J.A. García, A. Remon, V. Muñoz, R. Triboulet
Journal of Crystal Growth 192, 342 (1998)

We demonstrate the possibility of growing Hg_1-xCd_xI₂ layers on sapphire substrates by vapour phase epitaxy (VPE) . The successful growth has been carried out using an (-HgI₂ polycrystalline source and a CdTe buffer layer grown on sapphire by metalorganic vapour phase epitaxy (MOVPE) before the g_1-xCd_xI₂ VPE growth. The Hg_1-xCd_xI₂/ sapphire 20-40 m thick layers with a uniform composition in the range of x= 0.2-0.6 were grown at 220-250 ºC for 70-300 h. The layers were studied by scanning electron microscopy, energy disperse X-ray analysis and X-ray diffractometry. Results on the layer characterisation are reported and the effect of VPE conditions on the layer properties is considered