High Pressure Semiconductor Physics XII

International Conference on High Pressure Semiconductor Physics (Jul. 31-Aug. 3 2006)

Scope of the Conference

The Twelfth International Conference on High Pressure Semiconductor Physics (HPSP-12) is a satellite of the International Conference on the Physics of Semiconductors (ICPS) to be held in Vienna (Austria) during the previous week. Its aim is to bring together scientists and engineers who use high pressure and other forms of high stress in the study of semiconductors to present and discuss their latest results in this field. The HPSP-12 conference will review, in particular, the latest advances and developments in the study of nanostructured semiconductor materials and devices using high pressure techniques. Papers on both traditional bulk and low-dimensional systems are also welcomed. Submissions of original work on topics including, but not limited to the following list, are solicited:

  1. Electronic Structures
  2. Vibrational Properties
  3. Optical Properties
  4. Transport Phenomena
  5. Defect States
  6. Structural Phase Transitions
  7. Spin dependent properties
  8. Novel materials, structures and devices
  9. New experimental or computational techniques

Further information: Dr. Alejandro R. Goñi ICREA Research Professor Institut de Ciència de Materials de Barcelona (ICMAB) Campus de la UAB E-08193 Bellaterra Spain Tel: +34-93-580 1853 ext. 327 Fax: +34-93-580 5729 E-mail: goni@physik.tu-berlin.de, hpsp12@uv.es