International Conference on High Pressure Semiconductor Physics (Jul. 31-Aug. 3 2006)
Manuscript submission & Preparation
Prof. A. Segura, Universidad de Valencia, Spain.
Transport properties of InSe and GaSe under pressure (experiment & theory).
Dr. J. Arvanitidis, Aristotle Univ. Thessaloniki, Greece.
Raman spectroscopy on carbon nanotubes (SWNT, DWNT) & related materials under pressure.
Dr. W. Trzeciakowski, UNIPRESS, Warsaw, Poland.
Pressure tuning of semiconductor lasers.
Dr. G. Franssen, UNIPRESS, Warsaw, Poland.
Hydrostatic pressure and internal piezoelectric fields in nitride emitters.
Dr. A. Patanè, Univ. of Nottingham, UK.
The fragmented band structure of dilute Ga(AsN) alloys revealed by hydrostatic pressure and
magnetic field.
Prof. E.A. Ekimov, Vereshchagin Inst. High Pressure Phys., Troitsk, Russia.
Superconductivity in diamond induced by boron doping at high pressure.
Prof. D. Dunstan, Queen Mary Univ. London, UK.
Strength of strained quantum wells and other small scale structures.
Dr. D. Paul, Univ. of Cambridge, Cavendish Lab, UK.
An overview of strained-Si/SiGe heterostructures in microelectronics and optics.
Prof. B. Weinstein, SUNY at Buffalo, USA.
Raman spectroscopy under pressure in nanoparticle semiconductors.
Dr. M. Hanfland, ESRF Grenoble, France.
High-pressure structural studies on semiconductors with synchrotron radiation.
Dr. J.S. Tse, NRC, Ontario, Canada.
Electronic & atomic structure calculations of high pressure phases of elemental semiconductors.
Prof. A.R. Adams, Univ. of Surrey, Guildford, UK.
Analysis of semiconductor lasers using high pressures.
Dr. P.J. Klar, Phillips-Univ. of Marburg, Germany.
High-pressure experiments on dilute nitride alloys.
Dr. A.F. Goncharov, Lawrence Livermore Nat. Lab., California, USA.
Phase diagram and proposed superionic state of water at 50 GPa and 1000 K.
Dr. R. Laskowski, TU-Vienna, Vienna, Austria.
Ab-initio calculations of electron-hole correlations in optically excited semiconductors
under pressure.
Prof. E. Dizhur, Inst. for High Pressure Physics, Troitsk, Russia.
Metal-insulator transition in GaAs with a -doped layer under pressure.
Prof. G. Remenyi, CNRS-CRTBT, Grenoble, France.
Magnetoelastic effects in colossal magnetoresistance Pr1-xCaxMnO3 compounds.
Prof. I.F. Silvera, Harvard Univ., Cambridge, USA.
The ruby pressure standard to 150 GPa.
Prof. T. Mishina, Hokkaido Univ., Sapporo, Japan.
Femtosecond pump & probe spectroscopy in Bi under pressure.
Prof. M. Gauthier, France.
Ultrasound experiments on semiconductors.
Prof. S. Gama, UNICAMP, Campinas, Brazil.
Pressure-induced colossal magnetocaloric effect in MnAs.
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