The research focuses on growing materials 2D such as graphene, MoS2 o WS2on technologically attractive substrates or reusable in the form of high-quality layers and with homogeneity over large areas, so that they can have a direct application in the electronic industry with sustainable procedures and competitive prices. We will use for this purpose Molecular Beam Epitaxy techniques (MBE) and Plasma Enhanced Chemical Vapor Deposition (PECVD).
The project aims to develop scalable techniques for the incorporation of graphene and other two-dimensional techniques (2D) in microelectronic devices, promoting its transition, from basic research to industrial applications . For this purpose, they propose the controlled growth of graphene and metal dichalcogenide (such as MoS₂) through Molecular Beam Epitaxy (MBE) and Plasma Enhanced Chemical Vapor Deposition (PECVD), evaluating their integration in high-performance transistors, diodes and Hall sensors.
The initiative, by the Institute for Molecular Science (ICMol) in collaboration with Grafenano, aims to optimise low-cost and sustainable 2D semiconductor materials, to establish patents on new synthesis and fabrication methods and create functional prototypes with direct impact on the electronic post-CMOS industry, as well as in power, detection and spintronics technologies.
The project aims to develop scalable techniques for the incorporation of graphene and other two-dimensional techniques (2D) in microelectronic devices, promoting its transition, from basic research to industrial applications . For this purpose, they propose the controlled growth of graphene and metal dichalcogenide (such as MoS₂) through Molecular Beam Epitaxy (MBE) and Plasma Enhanced Chemical Vapor Deposition (PECVD), evaluating their integration in high-performance transistors, diodes and Hall sensors.
The initiative, by the Institute for Molecular Science (ICMol) in collaboration with Grafenano, aims to optimise low-cost and sustainable 2D semiconductor materials, to establish patents on new synthesis and fabrication methods and create functional prototypes with direct impact on the electronic post-CMOS industry, as well as in power, detection and spintronics technologies.
Acronym
P1
Reference code
TSI-069100-2023-0012
Description
Main activities
- Growth and characterization of epitaxial graphene and other 2D semiconductor materials through MBE. With this technique aims to create high-quality graphene and develop 2D materials which are intrinsically semiconductors (MoS2) and scalable to industrial processes.
- Growth with the graphene PECVD technique and other 2D materials on reusable substrates and comparison with the obtained results of the MBE technique. Evaluation of cost versus performance.
- Manufacture of prototype devices and product development:
- Graphene transistor semiconductor and 2D materials
- Diodes (MoS2/SiC) compatible with high power electronics
- Sensor Hall made of epitaxial graphene
- Training programme for research staff pre-doctoral and post-doctoral.
Developers of the project
Institute of Molecular Science
Principal investigators:
- Coronado Miralles, Eugenio
- PDI-Catedratic/a d'Universitat
- Director/a Titulacio Master Oficial
- Director/a d' Institut Universitari
Start date
2023
September
End date
2026
June
Funding agencies:
Ministry for Digital Transformation and the Civil Service, European Union Recovery, Transformation and Resilience Plan, «European Union - NextGenerationUE»
Grant under the European Recovery, Transformation and Resilience European Plan, financed by UE, NextegenerationEU.
Project financed by the State Secretariat for Telecommunications and Digital Infrastructure. Reference: TS-069100-2023-0012.
Partners:
GRAPHENANO, S.L.
Project type
- EU - NextGenerationEU
