P8. Non-linear absorption laser system for comprehensive non-invasive inspection in CMOS technology semiconductor production

This project proposal consists of developing a complete two-photon absorption laser system for characterising semiconductor devices and integrated semiconductor circuits in CMOS technology.

Acronym

Reference code

TSI-069100-2023-0012

Description

The main goal of this project is to develop a semiconductor materials characterisation system with non-destructive procedures and quickly, based on the transient current technique through the absorption of two photons (TPA-TCT).

The system will be designed for its integration into the quality control processes of manufacturing plants of semiconductor chips (foundries) and will be implemented preliminarily in the analysis and development of new-generation CMOS technology pixel detectors.

Developers of the project

Institute of Corpuscular Physics

webific.ific.uv.es/web

ific@uv.es

Keywords

CMOS, non-linear absorption

Principal investigators:

Mariñas Pardo, Carlos

View details

Start date

2023 September

End date

2027 June

Funding agencies:

Ministry for Digital Transformation and the Civil Service, European Union Recovery, Transformation and Resilience Plan, «European Union - NextGenerationUE»

Grant under the European Recovery, Transformation and Resilience European Plan, financed by UE, NextegenerationEU.

Project financed by the State Secretariat for Telecommunications and Digital Infrastructure. Reference TS-069100-2023-0012.

Partners:

FYLA LASER, S.L.

FYLA LASER

Project type

EU - NextGenerationEU