The research focuses on growing materials 2D such as graphene, MoS2 o WS2on technologically attractive substrates or reusable in the form of high-quality layers and with homogeneity over large areas, so that they can have a direct application in the electronic industry with sustainable procedures and competitive prices. We will use for this purpose Molecular Beam Epitaxy techniques (MBE) and Plasma Enhanced Chemical Vapor Deposition (PECVD).
The project aims to develop scalable techniques for the incorporation of graphene and other two-dimensional techniques (2D) in microelectronic devices, promoting its transition, from basic research to industrial applications . For this purpose, they propose the controlled growth of graphene and metal dichalcogenide (such as MoS₂) through Molecular Beam Epitaxy (MBE) and Plasma Enhanced Chemical Vapor Deposition (PECVD), evaluating their integration in high-performance transistors, diodes and Hall sensors.
The initiative, by the Institute for Molecular Science (ICMol) in collaboration with Grafenano, aims to optimise low-cost and sustainable 2D semiconductor materials, to establish patents on new synthesis and fabrication methods and create functional prototypes with direct impact on the electronic post-CMOS industry, as well as in power, detection and spintronics technologies.

In the last decades, innovative semiconductors have emerged from molecular materials to inorganic. Some of them have demonstrated properties that allow their use in advanced electronic devices such as transistors, photodiodes, light emitting diodes and photovoltaics. In this project, we focus on the the metal-halides of perovskites, because they have demonstrated excellent cargo carrier mobility when processed in thin sheets. However, the processing of innovative semiconductors is limited to complicated methods, expensive and low speed, such as molecular beam epitaxy or similar processes using high vacuum.

This project promotes the specialization of optoelectronic researchers applied to medical instrumentation and the development of new technologies to detect X rays. Through innovative materials based on lead-free perovskites and the design of advanced photodiodes, the initiative seeks to enhance the sensibility and the image resolution, reducing at the same time the necessary radiation dose and paving the way for more efficient, flexible and accessible devices.

This projects works on the advanced training of a researcher in the field of infared image sensors and at the same time, promotes the development of new technologies for the detection in the region NIR-SWIR. By means of the design of p-i-n photodiodes that can be integrated in CMOS circuits and the exploration of alternative materials lead-free and mercury-free, this initiative aims to create sensors that are safer, more efficient and compatible with inspection, biomedical, surveillance and scientific observation applications.

Photoluminescence Quantum Yield (PLQY) is one of the most important photophysical parameters when characterising optoelectronic materials.

X-ray detectors based on photon counting are being gradually integrated into the latest generation of systems for medical diagnosis, industrial inspection and security. These detectors consist of two types of interconnected semiconductor pixelated devices: a sensor and a photon counter chip.

The investigation focuses on developing new memristive devices which are able to emulate synaptic plasticity of human brain by means of chemical control of ionic migration in polymeric matrix and hybrid systems with two-dimensional materials (MoS₂, MXenes, graphene oxides).
This materials make it possible to integrate the storage and information processing in a single electronic component making room for neuromorphic computing and edge artificial intelligence (Edge AI) for applications in vision, hearing and bioinspired sensors.
The project proposes a chemical and molecular physics to design low energy artificial synapses with adjustable learning and biologically relevant responses time.

This project proposal consists of developing a complete two-photon absorption laser system for characterising semiconductor devices and integrated semiconductor circuits in CMOS technology.