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  • Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques

    E. Secco, A. Minj, N. Garro, A. Cantarero, J. Colchero, A. Urban, CI Oppo, J. Malindretos, A. Rizzi

    (2015).Article

    Journal of Physics D: Applied Physics.

  • The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

    Thomas Auzelle, Benedikt Haas, Albert Minj, Catherine Bougerol, Jean-Luc Rouvière, Ana Cros, Jaime Colchero, and Bruno Daudin

    (2015).Article

    J. Appl. Phys. 117, 245303.

  • The controlled growth of GaN microrods on Si(111) substrates by MOCVD

    B. Foltynski, N. Garro, M. Vallo, M. Finken, C. Giesen, H. Kalisch, A. Vescan, A. Cantarero, M. Heuken

    (2015).Article

    J. Crystal Growth 414, 200 (2015).

    DOI: doi:10.1016/j.jcrysgro.2014.10.047

  • Microstructure and mechanical properties of plasma spraying coatings from YSZ feedstocks comprising nano- and submicron-sized particles

    P. Carpio, A. Borrell, MD Salvador, A. Gomez, E. Martinez, E. Sanchez

    (2014).Article

    Cer. Int. 41, 4108 (2015).

    DOI: doi:10.1016/j.ceramint.2014.11.106

  • Prueba Fotónica y Semiconductores

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    (2014).Article

  • Prueba Nanomateriales

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    (2014).Article

  • Prueba Polímeros

    ddsgds

    (2014).Article

  • Prueba Arqueometria

    ddsgds

    (2014).Article

 
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