P5

TSI-069100-2023-0012

This project has two important actions. The first action is the training of specialized research staff in the field of infrared image sensors for biomedical, inspection, surveillance, astronomy, aerial and satellite imagery, etc. The second action will be the industrial research related to the development of such image sensors,that will be based on p-i-n photodiodes with sensitivity in the infrared spectral region 1.2-1.6 μm, which will be integrated into a read-out integrated circuit (ROIC) based on silicon CMOS technology.

In this spectral region, IV-VI semiconductors, such as PbS, PbSe and PbTe (as well as mercury-based ones) in the form of quantum dots (QDs) are the most used reference materials to date. QDs are defined by quantum confinement due to size, reducing it below the excitonic Bohr radius of the bulk semiconductor.

Colloidal QDs can be easily obtained with wet chemistry using the hot injection method with optical properties that are reasonably good for optoelectronic applications.

Nonetheless, QDs in the alluded semiconductors contain lead or mercury, which are toxic elements and, therefore, not allowed for use in biomedical, optoelectronic and consumer electronics applications.

For this reason, the second main goal of this project will be the use of I-VI (Ag2S, Ag2Se, Ag2Te) and III-V (InAs, InAsP, InAs/InP) semiconductors as an alternative to QDs based on Pb for the Fabrication of p-i-n heterojunction photodiodes that will be integrated in a silicon ROIC, as the base for the fabrication of efficient NIR-SWIR image sensors in the infrared region of wavelengths from 1.2 to 1.6 μm.

infrarojos, semiconductors sense plom

Ministry for Digital Transformation and the Civil Service, European Union Recovery, Transformation and Resilience Plan, «European Union - NextGenerationUE»

Grant under the European Recovery, Transformation and Resilience European Plan, financed by UE, NextegenerationEU.

Project financed by the State Secretariat for Telecommunications and Digital Infrastructure. Reference TS-069100-2023-0012.

ams-OSRAM INTERNATIONAL GMBH

• EU - NextGenerationEU