1. Electronic and Optical Properties of Group-III Nitrides

• Correlation of the growth conditions with the transport properties (mobility, electron concentration and scattering mechanisms) of the two-dimensional electron gas in AlGaN/GaN hesterostructures.
• Optical properties of ultra-wide bandgap AlN.
• Incorporation of indium in InAlGaN (for optoelectronic devices in the ultraviolet) and nitrogen in InGaAsN (for infrared devices and solar cells).
• Effect of piezoelectric fields in the performance of optoelectronic devices.
• Energy levels and transition probabilities in InGaN self-organized quantum dots and their optical response.

2. Colossal Magnetoresistance

• Optical characterization (ellipsometry, infrared spectroscopy and light scattering) of GMR materials.
• Transport properties of GMR materials.

3. Surface acoustic waves

• Solution of the drift-diffusion equation to analyze the physical behavior of surface acoustic wave devices.