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  • Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

    Gruart, M.; Feldberg, N.; Gayral, B.; Bougerol, C.; Pouget, S.; Bellet-Amalric, E.; Garro, N.; Cros, A.; Okuno, H.; Daudin, B.

    (2020).Article

    Nanotechnology, 31, 11, 115602 .

    DOI: 10.1088/1361-6528/ab5c15
    ISBN: 0957-4484
    ISSN: 13616528

  • Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

    Concordel, Alexandre; Jacopin, Gwénolé; Gayral, Bruno; Garro, Núria; Cros, Ana; Rouvière, Jean Luc; Daudin, Bruno

    (2019).Article

    Applied Physics Letters, 114, 17, UNSP 172101.

    DOI: 10.1063/1.5094627
    ISBN: 0003-6951
    ISSN: 00036951

  • Spontaneous intercalation of Ga and in bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

    Feldberg, Nathaniel; Klymov, Oleksii; Garro, Nuria; Cros, Ana; Mollard, Nicolas; Okuno, Hanako; Gruart, Marion; Daudin, Bruno

    (2019).Article

    Nanotechnology, 30, 37, 375602.

    DOI: 10.1088/1361-6528/ab261f
    ISBN: 0957-4484
    ISSN: 13616528

  • Non-resonant Raman spectroscopy of individual ZnO nanowires via Au nanorod surface plasmons

    Andrea Pescaglini, Eleonora Secco, Alfonso Martin, Davide Cammi, Carsten Ronning, Andres Cantarero, Nuria Garro and Daniela Iacopino

    (2016).Article

    DOI: 10.1039/c5tc03990h

  • Si Donor Incorporation in GaN Nanowires

    Zhihua Fang, Eric Robin, Elena Rozas-Jiménez, Ana Cros, Fabrice Donatini, Nicolás Mollard, Julien Pernot, and Bruno Daudin

    (2015).Article

    Nano Letters 15, 6794.

    DOI: 10.1021/acs.nanolett.5b02634

  • Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

    Albert Minj, Ana Cros, Núria Garro, Jaime Colchero, Thomas Auzelle and Bruno Daudin

    (2015).Article

    DOI: 10.1021/acs.nanolett.5b02607

  • Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques

    E. Secco, A. Minj, N. Garro, A. Cantarero, J. Colchero, A. Urban, CI Oppo, J. Malindretos, A. Rizzi

    (2015).Article

    Journal of Physics D: Applied Physics.

  • The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

    Thomas Auzelle, Benedikt Haas, Albert Minj, Catherine Bougerol, Jean-Luc Rouvière, Ana Cros, Jaime Colchero, and Bruno Daudin

    (2015).Article

    J. Appl. Phys. 117, 245303.

  • The controlled growth of GaN microrods on Si(111) substrates by MOCVD

    B. Foltynski, N. Garro, M. Vallo, M. Finken, C. Giesen, H. Kalisch, A. Vescan, A. Cantarero, M. Heuken

    (2015).Article

    J. Crystal Growth 414, 200 (2015).

    DOI: doi:10.1016/j.jcrysgro.2014.10.047
 
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