The UV research groups (GIUV) are regulated in the 1st chapter of the Regulation ACGUV48/2013, which explains the procedure for creating new research structures. They are basic research and organizational structures that result from the voluntary association of researchers that share objectives, facilities, resources and common lines of research. These researchers are also committed to the consolidation and stability of their activity, work in groups and the capability to achieve a sustainable funding.

The research groups included in the previously mentioned Regulation are registered in the Register of Research Structures of the Universitat de València (REIUV), managed by the Office of the Vice-principal for Research. The basic information of these organisms can be found in this website.

Participants

Data related to research groups featured in various information dissemination channels shall not, under any circumstances, imply a statement or commitment regarding the employment or academic affiliation of individuals associated with the Universitat de València. Their inclusion is solely the responsibility of the group directors. Updates will be made upon request from interested parties.

  • Registered groups in the Register of Research Structures of the Universitat de València - (REIUV)

Crystal Growth and Semiconductor Characterization Group - CRECYCSEM

Reference of the Group:

GIUV2013-072

 
Description of research activity:
The crystal growth group of the Universitat de València focuses its activity on the growth and structural and morphological characterisation of semiconductors, both in volume and in the form of layers and nanostructures. This activity has been carried out mainly within the framework of different research projects in the area of materials for optoelectronics and spintronics. The results obtained have been reflected in a significant academic contribution both in articles in journals of wide scientific dissemination and in congresses and workshops. The approach to the technological sector has been carried out in two areas: solar energy and humidity and infrared sensors. For the development of this research activity, a laboratory has been set up in which different crystalline growth techniques have been installed: Bridgman, Physical Vapour Transport, Travelling Heater Method, MOCVD, Spray Pyrolysis, Hydrothermal; as well as different preparation techniques and post-growth treatments, which provides a wide range of infrastructures and development possibilities. In relation to structural and morphological characterisation, the members of the group have proven expertise in...The crystal growth group of the Universitat de València focuses its activity on the growth and structural and morphological characterisation of semiconductors, both in volume and in the form of layers and nanostructures. This activity has been carried out mainly within the framework of different research projects in the area of materials for optoelectronics and spintronics. The results obtained have been reflected in a significant academic contribution both in articles in journals of wide scientific dissemination and in congresses and workshops. The approach to the technological sector has been carried out in two areas: solar energy and humidity and infrared sensors. For the development of this research activity, a laboratory has been set up in which different crystalline growth techniques have been installed: Bridgman, Physical Vapour Transport, Travelling Heater Method, MOCVD, Spray Pyrolysis, Hydrothermal; as well as different preparation techniques and post-growth treatments, which provides a wide range of infrastructures and development possibilities. In relation to structural and morphological characterisation, the members of the group have proven expertise in high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). The correlation of material properties with growth conditions has allowed a better understanding of growth processes and structural defects and is the focus of the main part of the group's work. At present, a large part of the activity is focused on the oxides of group II materials (ZnO, CdO and MgO) and their alloys. Within this framework was the leadership of the European SOXESS project as well as the organisation of Symposium IX at the E-MRS on this topic. The group collaborates on a regular basis with national groups (Uno.Valladolid, Uno. País Vasco, Instituto Jaume Almera, (ISOM) UPM, as well as with foreign groups (CNRS-Bellevue, France; University of Warwick, UK; National Renewable Energy Lab. in Golden, Colorado, USA).
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Web:
 
Scientific-technical goals:
  • Crecimiento cristalino y caracterizacion de materiales para la optoelectronica UV y la espintronica
 
Research lines:
  • Crystal growth.Growth of materials using the techniques of: Bridgman, travelling heater method (THM), physical vapor deposition (PVD), metalorganic chemical vapor deposition (MOCVD), spray pyrolysis (SP). Currently, different types of oxides (CdO, MgO, ZnO and alloys) are being grown.
  • Structural characterization.Characterisation using high-resolution X-ray diffraction (HRXRD), X-ray multiple diffraction (XRMD), scanning electron microscopy (SEM), high-resolution transmission microscopy (HRTEM). The materials analysed can be bulk, layered or nanostructures.
  • Physical properties.Characterisation of physical properties, with special emphasis on optical properties: absorption, photoluminescence, Raman spectroscopy.
 
Group members:
Name Nature of participation Entity Description
VICENTE MUÑOZ SANJOSEDirectorUniversitat de València
Research team
LUIS ARTUS SURROCACollaboratorConsejo Superior de Investigaciones Científicasresearcher
RAMON CUSCO CORNETCollaboratorConsejo Superior de Investigaciones Científicasresearcher
JOSE ANGEL GARCIA GARCIACollaboratorUniversidad del País Vasco Euskal Herriko Unibertsitateafull university professor
 
CNAE:
  • -
 
Associated structure:
  • Applied Physics and Electromagnetism
 
Keywords:
  • Bridgman; THM; PVD; MOCVD; SP; CdO; MgO; ZnO
  • SEM; XRD; HRXRD; HRTEM
  • Propiedades fisicas de semiconductores